D. Yu. Bolkhovityanov : rechercher sur Z-Library

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1

The Back-Side Morphology of LPE-Grown AlGaAs/GaAs/AlGaAs Heterostructures after the Complete Removal of the GaAs Substrate by Selective Etching

Dr. Yu. B. Bolkhovityanov, E. H. Hairi, V. I. Yudaev

Journal:

Crystal Research and Technology

Année:

1992

Langue:

english

Fichier:

PDF, 308 KB

english, 1992

2

The initial growth stages of III–V lattice-mismatched films grown by liquid phase epitaxy

Yu.B. Bolkhovityanov, Yu.D. Vaulin

Journal:

Thin Solid Films

Année:

1982

Langue:

english

Fichier:

PDF, 931 KB

english, 1982

3

The initial stages of heteroepitaxy from the liquid phase at a low misfit: InGaAsP on GaAs

Yu.B. Bolkhovityanov, V.I. Yudaev, A.K. Gutakovsky

Journal:

Thin Solid Films

Année:

1986

Langue:

english

Fichier:

PDF, 3.37 MB

english, 1986

4

Potentialities and basic principles of controlling the plastic relaxation of GeSi/Si and Ge/Si films with stepwise variation in the composition

Yu. B. Bolkhovityanov, A. K. Gutakovskii, A. S. Deryabin, O. P. Pchelyakov, L. V. Sokolov

Journal:

Année:

2008

Langue:

english

Fichier:

PDF, 571 KB

english, 2008

5

Experimental observation of nucleation of misfit dislocations induced by the stress field of primary dislocations

Bolkhovityanov, Yu.B., Deryabin, A.S., Gutakovskii, A.K., Sokolov, L.V.

Journal:

Thin Solid Films

Année:

2019

Langue:

english

Fichier:

PDF, 1.09 MB

english, 2019

6

Investigation of GaAs—InyGa1−yPzAs1−z–InxGa1−x-As grading heterojunctions formation

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, V. I. Yudaev

Journal:

Crystal Research and Technology

Année:

1980

Langue:

english

Fichier:

PDF, 737 KB

english, 1980

7

Effect of buffer layers on the dislocation structure of heteroepitaxial systems

Dr. Yu. B. Bolkhovityanov, Yu. D. Vaulin, A. K. Gutakovsky, S. I. Stenin, V. I. Yudaev

Journal:

Crystal Research and Technology

Année:

1981

Langue:

english

Fichier:

PDF, 742 KB

english, 1981

8

A Multipurpose Graphite Boat for LPE Growth of Multilayer Heterostructures

Dr. Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, E. H. Hairi, S. I. Chikichev, V. I. Yudaev

Journal:

Crystal Research and Technology

Année:

1982

Langue:

english

Fichier:

PDF, 574 KB

english, 1982

9

Study of InxGa1–xP/GaAs Films Formation on the Basis of In–Ga–P Liquidus Precised Investigation

Dr. Yu. B. Bolkhovityanov

Journal:

Crystal Research and Technology

Année:

1982

Langue:

english

Fichier:

PDF, 458 KB

english, 1982

10

Isothermal contact of III–V saturated solutions with different III-V substrates: Two mode of behavior

Dr. Yu. B. Bolkhovityanov

Journal:

Crystal Research and Technology

Année:

1983

Langue:

english

Fichier:

PDF, 558 KB

english, 1983

11

Instability of “slow” solid-liquid interface relaxation before the hetero-LPE of III-V compounds

Dr. Yu. B. Bolkhovityanov, S. I. Chikichev

Journal:

Crystal Research and Technology

Année:

1983

Langue:

english

Fichier:

PDF, 717 KB

english, 1983

12

Dislocation etch-pits revealed in submicron (100) GaAs epilayers by selective dissolution in the saturated GaSb melt

Dr. Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, E. M. Trukhanov

Journal:

Crystal Research and Technology

Année:

1985

Langue:

english

Fichier:

PDF, 399 KB

english, 1985

13

The transition layers in AlGaAs/GaAs and InGaAsP/GaAs heterostructures grown by LPE

Yu. B. Bolkhovityanov

Journal:

Crystal Research and Technology

Année:

1989

Langue:

english

Fichier:

PDF, 705 KB

english, 1989

14

A difference between initial growth stages of the AlGaAs/GaAs and GaAs/AlGaAs heterostructures produced by contact replacement of solutions

Dr. Yu. B. Bolkhovityanov, L. M. Logvinskii, N. S. Rudaya

Journal:

Crystal Research and Technology

Année:

1989

Langue:

english

Fichier:

PDF, 623 KB

english, 1989

15

Investigation of growth kinetics and mechanism of GaAs and (InGa)As thin films grown by a step-cooling technique of the liquid phase epitaxy

Yu.B. Bolkhovityanov, H.B. Zembatov

Journal:

Journal of Crystal Growth

Année:

1977

Langue:

english

Fichier:

PDF, 586 KB

english, 1977

16

The peculiarities of isothermal contact of liquid and solid phase during the LPE of A3B5 compounds

Yu.B. Bolkhovityanov

Journal:

Journal of Crystal Growth

Année:

1981

Langue:

english

Fichier:

PDF, 1.10 MB

english, 1981

17

The contact phenomena between the liquid phase and the substrate during LPE of A3B5 compounds

Yu.B. Bolkhovityanov

Journal:

Journal of Crystal Growth

Année:

1982

Langue:

english

Fichier:

PDF, 501 KB

english, 1982

18

The formation of alxGa1-xAs layers by regrowth on the surface of GaAs during its contact with the undersaturated liquid-containing Al

Yu.B. Bolkhovityanov, R.I. Bolkhovityanova, Yu.D. Vaulin, T.A. Gavrilova, B.Z. Olshanetsky, S.I. Stenin

Journal:

Journal of Crystal Growth

Année:

1986

Langue:

english

Fichier:

PDF, 726 KB

english, 1986

19

Liquid phase epitaxial growth of elastically strained InGaAsP layers for spin-polarized electron sources

Yu.B. Bolkhovityanov, V.L. Alperovich, A.S. Jaroshevich, N.V. Nomerotsky, A.G. Paulish, A.S. Terekhov, E.M. Trukhanov

Journal:

Journal of Crystal Growth

Année:

1995

Langue:

english

Fichier:

PDF, 243 KB

english, 1995

20

Liquid phase epitaxial growth of elastically strained InxGa1−xP and InxGa1−xAsyP1−yP solid solutions on GaAs substrates

Yu.B. Bolkhovityanov, A.M. Gilinsky, N.V. Nomerotsky, E.M. Trukhanov, A.S. Jaroshevich

Journal:

Journal of Crystal Growth

Année:

1995

Langue:

english

Fichier:

PDF, 462 KB

english, 1995

21

Liquid phase epitaxy of highly strained InGaAsP/GaAs films in the 1.4–1.8 eV interval of band gaps

Yu.B. Bolkhovityanov, A.S. Jaroshevich, N.V. Nomerotsky, M.A. Revenko, E.M. Trukhanov

Journal:

Journal of Crystal Growth

Année:

1996

Langue:

english

Fichier:

PDF, 498 KB

english, 1996

22

The co-existence of multi-component liquid and solid intermediate phases before the hetero-LPE of III–V solid solutions

Yu.B. Bolkhovityanov

Journal:

Progress in Crystal Growth and Characterization

Année:

1989

Langue:

english

Fichier:

PDF, 2.32 MB

english, 1989

23

New material for photoemission electron source: semiconductor alloy InGaAsP grown on GaAs substrate

V.L. Alperovich, Yu.B. Bolkhovityanov, A.G. Paulish, A.S. Terekhov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Année:

1994

Langue:

english

Fichier:

PDF, 586 KB

english, 1994

24

Emission of spin-polarized electrons from strained InGaP and InGaAsP photocathodes

P. Drescher, S. Plützer, E. Reichert, M. Schemies, V.L. Alperovich, Yu.B. Bolkhovityanov, A.S. Jaroshevich, A.G. Paulish, H.E. Scheibler, A.S. Terekhov

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Année:

1996

Langue:

english

Fichier:

PDF, 490 KB

english, 1996

25

Heterostructures GexSi1−x/Si(0 0 1) grown by low-temperature (300–400 °C) molecular beam epitaxy: Misfit dislocation propagation

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, L.V. Sokolov

Journal:

Journal of Crystal Growth

Année:

2005

Langue:

english

Fichier:

PDF, 349 KB

english, 2005

26

Dominating nucleation of misfit dislocations from the surface in GeSi/Si(0 0 1) films with a stepwise composition grown by means of molecular-beam epitaxy

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, L.V. Sokolov

Journal:

Journal of Crystal Growth

Année:

2006

Langue:

english

Fichier:

PDF, 402 KB

english, 2006

27

Sb as surfactant at plastic relaxation of GeSi/Si(0 0 1) films grown by molecular-beam epitaxy: Reduction of surface roughness value

Yu. B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Journal:

Journal of Crystal Growth

Année:

2006

Langue:

english

Fichier:

PDF, 221 KB

english, 2006

28

Formation of edge misfit dislocations in GexSi1−x (x∼0.4–0.5) films grown on misoriented (0 0 1)→(1 1 1) Si substrates

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Journal:

Journal of Crystal Growth

Année:

2008

Langue:

english

Fichier:

PDF, 1.61 MB

english, 2008

29

Specific features of formation and propagation of 60° and 90° misfit dislocations in GexSi1−x/Si films with x>0.4

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, L.V. Sokolov

Journal:

Journal of Crystal Growth

Année:

2010

Langue:

english

Fichier:

PDF, 973 KB

english, 2010

30

Heterostructures GexSi1−x/Si(001) (x=0.18–0.62) grown by molecular beam epitaxy at a low (350 °C) temperature: specific features of plastic relaxation

Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, L.V. Sokolov

Journal:

Thin Solid Films

Année:

2004

Langue:

english

Fichier:

PDF, 573 KB

english, 2004

31

InGaAsP/InGaP superlattices by conventional MBE with molten metal solution phosphorus source

M.A Putyato, V.V Preobrazhenskii, B.R Semyagin, Yu.B Bolkhovityanov, A.M Gilinsky, A.K Gutakousky, M.A Revenko, O.P Pchelyakov, D.F Feklin

Journal:

Journal of Crystal Growth

Année:

2003

Langue:

english

Fichier:

PDF, 351 KB

english, 2003

32

Molecular beam epitaxy of silicon–germanium nanostructures

O.P Pchelyakov, Yu.B Bolkhovityanov, A.V Dvurechenskii, A.I Nikiforov, A.I Yakimov, B Voigtländer

Journal:

Thin Solid Films

Année:

2000

Langue:

english

Fichier:

PDF, 929 KB

english, 2000

33

Solid solutions GeSi grown by MBE on a low temperature Si (001) buffer layer: specific features of plastic relaxation

Yu.B Bolkhovityanov, A.K Gutakovskii, V.I Mashanov, O.P Pchelyakov, M.A Revenko, L.V Sokolov

Journal:

Thin Solid Films

Année:

2001

Langue:

english

Fichier:

PDF, 1.56 MB

english, 2001

34

Investigation of doping profiles and incorporation of Sn and Te in GaAs and inxGa1–xas films grown from thin solution layer

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, N. B. Zembatov, N. E. Marchenko

Journal:

physica status solidi (a)

Année:

1974

Langue:

english

Fichier:

PDF, 389 KB

english, 1974

35

Incorporation of Sn and Te in GaAs and InxGa1−xAs Films Grown from Solution

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova

Journal:

physica status solidi (a)

Année:

1975

Langue:

english

Fichier:

PDF, 380 KB

english, 1975

36

Study of doping of InxGa1−xAs films with germanium

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova, N. E. Marchenko, B. V. Morozov

Journal:

physica status solidi (a)

Année:

1975

Langue:

english

Fichier:

PDF, 497 KB

english, 1975

37

The influence of indium on the pn junction formation in Sidoped LPE layers of gallium arsenide

R. I. Bolkhovityanova, Yu. B. Bolkhovityanov

Journal:

physica status solidi (a)

Année:

1976

Langue:

english

Fichier:

PDF, 129 KB

english, 1976

38

The lattice-pulling effect induced by the film stresses. Conditions of existence and discovery

Yu. B. Bolkhovityanov

Journal:

physica status solidi (a)

Année:

1983

Langue:

english

Fichier:

PDF, 559 KB

english, 1983

39

Growth peculiarities of graded band Gap GaAsSb/GaAs heterostructures and effective light modulation in the 1.06 μm wavelength region

Yu. B. Bolkhovityanov, B. A. Bobylev, V. I. Korzhov, V. I. Yudaev, E. H. Hairi

Journal:

physica status solidi (a)

Année:

1983

Langue:

english

Fichier:

PDF, 359 KB

english, 1983

40

Auger analysis of a GaAs (111) a surface after its contact with the InGaAsP saturated liquid

Yu. B. Bolkhovityanov, Yu. D. Vaulin, B. Z. Olshanetskii, S. I. Stenin, S. A. Teys

Journal:

physica status solidi (a)

Année:

1984

Langue:

english

Fichier:

PDF, 191 KB

english, 1984

41

Stress-induced isothermal formation of films during LPE growth of III–V compounds with Δ a/a # 0

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova

Journal:

physica status solidi (a)

Année:

1985

Langue:

english

Fichier:

PDF, 171 KB

english, 1985

42

Discovery of electron traps in lpe gaas grown from a bismuth melt

N. A. Yakusheva, V. Ya. Prinz, Yu. B. Bolkhovityanov

Journal:

physica status solidi (a)

Année:

1986

Langue:

english

Fichier:

PDF, 170 KB

english, 1986

43

A gaAs surface after its contact with an undersaturated AlGaAs liquid. Observation after anodic oxidation

Yu. B. Bolkhovityanov, R. I. Bolkhovityanova

Journal:

physica status solidi (a)

Année:

1987

Langue:

english

Fichier:

PDF, 486 KB

english, 1987

44

Surface Composition of Epitaxial Films of Gallium Arsenide and Related Compounds After Termination of their Growth from the Liquid Phase

Yu. B. Bolkhovityanov, A. E. Dolbak

Journal:

physica status solidi (a)

Année:

1990

Langue:

english

Fichier:

PDF, 389 KB

english, 1990

45

Elastically strained InGaAsP films grown by LPE and conception of stress-induced supercooling

Yu. B. Bolkhovityanov

Journal:

physica status solidi (a)

Année:

1995

Langue:

english

Fichier:

PDF, 528 KB

english, 1995

46

Silicon-germanium nanostructures with quantum dots: Formation mechanisms and electrical properties

O. P. Pchelyakov, Yu. B. Bolkhovityanov, A. V. Dvurechenskii, L. V. Sokolov, A. I. Nikiforov, A. I. Yakimov, B. Voigtländer

Journal:

Année:

2000

Langue:

english

Fichier:

PDF, 436 KB

english, 2000

47

Epitaxial growth, electronic properties, and photocathode applications of strained pseudomorphic InGaAsP/GaAs layers

V. L. Alperovich, Yu. B. Bolkhovityanov, S. I. Chikichev, A. G. Paulish, A. S. Terekhov, A. S. Yaroshevich

Journal:

Année:

2001

Langue:

english

Fichier:

PDF, 123 KB

english, 2001

48

Artificial GeSi substrates for heteroepitaxy: Achievements and problems

Yu. B. Bolkhovityanov, O. P. Pchelyakov, L. V. Sokolov, S. I. Chikichev

Journal:

Année:

2003

Langue:

english

Fichier:

PDF, 384 KB

english, 2003

49

Synthesis of ordered Ge-Si heterostructures containing ultrasmall germanium nanoclusters

Yu. B. Bolkhovityanov, S. Ts. Krivoshchapov, A. I. Nikiforov, B. Z. Ol’shanetskii, O. P. Pchelyakov, L. V. Sokolov, S. A. Teys

Journal:

Physics of the Solid State

Année:

2004

Langue:

english

Fichier:

PDF, 174 KB

english, 2004

50

Optimization of the plastic relaxation of misfit stresses in GexSi1−x/Si(001) (x≤0.61) heterostructures

Yu. B. Bolkhovityanov, A. S. Deryabin, A. K. Gutakovskii, M. A. Revenko, L. V. Sokolov

Journal:

Technical Physics Letters

Année:

2004

Langue:

english

Fichier:

PDF, 62 KB

english, 2004